The reaction sintering method of SiC was first successfully studied in the United States. The process of reaction sintering is as follows: firstly － SiC powder and graphite powder are mixed in proportion, and the porous green body is made by dry pressing, extrusion or grouting. When contacted with liquid Si at high temperature, C in the green body reacts with infiltrated Si to form － SiC, and with － SiC is combined, and excess Si is filled in the pores, thereby obtaining a non porous and dense reaction sintered body. Reaction sintered SiC usually contains 8% free Si. Therefore, in order to ensure complete Si infiltration, the blank should have sufficient porosity. Generally, by adjusting the initial mixture － The content of SiC and C, － The particle size distribution ya SIC, lolenge mpe bonene ya particule ya C, mpe pression ya moulage ekoki kosalelama mpo na kozwa densité ya vert oyo ebongi.
Ba expériences ezo lakisa que ba céramiques ya sic na sinterisation sans pression, sinterisation ya pressage à chaud, sinterisation ya pressage isostatique ya moto pe sinterisation ya réaction ezali na ba caractéristiques ya performance différentes. Soki sinterisation ya press ya moto pe pressage isostatique ya chaud sinter céramiques ya sic ya SIC ezali relativement likolo na ba termes ya densité ya sinction, réaction ya sinter, réaction ya ba sinters na ba reactions. Propriétés ya céramique ya sic ekeseni mpe na ba additifs ya sinterisation différents. sinterisation sans pression, pressage à chaud mpe sinter ya sinter ya réaction Ba céramiques ya sic bazali na résistance ya malamu na ba acides ya makasi mpe ba alcalis, kasi ba céramiques ya sinter sinter ya réaction ezali na résistance ya mabe na ba acides ultras ya makasi lokola HF{3} quand la température u quand , 9 , 2000 2000 quand la force , le plus bas , les plus bas , les plus bas , les plus bas , les plus bas , les plus bas , les plus bas , les plus bas , les plus bas , les plus bas À nse , les plus bas , les plus bas , les plus bas À nse , les plus bas-mouss , les plus bas-mi. ezali kobongisama; When the temperature exceeds 1400℃, the bending strength of reaction sintered SiC ceramics decreases sharply. (this is because the sintered body contains a certain amount of free Si, and the bending strength drops sharply when it exceeds a certain temperature.) for SiC ceramics sintered by pressureless sintering and hot isostatic pressing, the high-temperature resistance is mainly affected by Lolenge ya biloko oyo ebakisami .
